Amplitude modulators with delta doping superlattices


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The introduction of an nipi delta doping superlattice in a multiple quantum well structure can double the Stark effect, as predicted by Batty and Allsopp in 1993. In order to experimentally observe such effect GaAs/AlGaAs multiple quantum wells were grown with n- and p-type delta doping layers in the wells and barriers, respectively. The introduction of the delta-doping superlattice should increase the Stark shift and, consequently, should lead to a material structure more appropriate for amplitude modulators.

Fig. 1 Contrast ratio as a function of the reverse applied bias for a modulator structure containing the delta doping superlattice and for a reference sample.

Fig. 2 Chirp parameter as a function of externally applied electric field for a modulator structure containing the delta doping superlattice and for a reference sample.

The results obtained can be found in the following references:

  • Enhancement of the electroabsorption in multiple quantum well structures containing an nipi delta-doping superlattice

    C.V-B. Tribuzy, M. C. L. Areiza, S. M. Landi, M. Borgstrom, M. P. Pires and P. L. Souza
    Applied Physics Letters 86,

  • Effect of an Nipi Delta Doping Superlattice on In1-xGaxAs/In1-yAlyAs Amplitude Modulator Parameters

    C.V-B. Tribuzy, M. P. Pires, P. L. Souza e B. Yavich
    Microwave and Optical Technology Letters 43,168-173 (2004).

  • Delta doping superlattice structures for amplitude modulators: observation of the Stark effect and improvement of the chirp

    C. V.-B. Tribuzy, M. P. Pires, S. M. Landi, M. Borgström e P. L. Souza
    Applied Physics Letters 84, 3256-3258 (2004).

  • InGaAs/InAlAs Strained Multiple Quantum Wells for Efficient Amplitude Modulators

    C.V-B. Tribuzy, M. P. Pires, P. L. Souza e B. Yavich
    IEEE Transactions on Microwave Theory and Techniques 52, 1592-1597 (2004).

  • Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grown by low pressure metalorganic vapor phase epitaxy

    L. K. Hanamoto, C. M. A. Farias, A. B. Henriques, C. V.-B. Tribuzy, P. L. Souza e B. Yavich
    Journal of Applied Physics 93, 5460-5464 (2003).

  • Photoluminescence of GaAs/AlGaAs multiple quantum well structures containing ?-doping superlattices

    S. M. Landi, C. V.-B. Tribuzy, P. L. Souza, R. Butendeich, A. C. Bittencourt e G. E. Marq/h5>
    Physical Review B 67, 085304 (2003).

  • Effect of growth temperature on C-doped InAlAs layers grown by LP-MOVPE

    M. L. Ribeiro, P. L. Souza, C. V. B.-Tribuzy e B.Yavich
    Journal of Crystal Growth 248, 134-138 (2003).
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