Interdiffusion in quantum wells


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We have employed photoluminescence spectroscopy to experimentally study the effect of atomic interdiffusion on the optical properties of narrow GaAs/AlAs quantum wells. Different diffusion profiles were induced at the interfaces by thermally annealing each sample at a fixed temperature for different periods of time. The photoluminescence spectra show a blue shift of the quantum well transitions with increasing diffusion length and a quenching of the oscillator strength at a critical diffusion length indicating a direct to indirect gap transition of the material. See figure below.

Fig. 1 Photoluminescence spectra of a GaAs/AlAs QW structure at 77 K in the region of the QW emission after different annealing periods. The transitions are indicated by arrows.

The atomic interdiffusion was also studied in InGaAs/InP quantum wells using low angle X-ray reflection, X-ray diffraction and photoluminescence. A blue shift of the photoluminescence peak was observed. X-ray experiments allowed the determination of the As/P interdiffusion coefficient.

The results obtained can be found in the following references:

  • Interdiffusion studies in InGaAs/InP multiple quantum wells by low angle X-ray reflection, X-ray diffraction and photoluminescence

    J. Brant-de-Campos, R. R. de Avillez, M. Pamplona Pires, P. L. Souza e B. Yavich
    Apresentação no 9th Brazilian Workshop on Semiconductor Physics, Belo Horizonte, MG, Brasil, fevereiro de 1999.

  • Low Angle, X-Ray Reflection Studies of InGaAs/InP Multiple Quantum Wells

    J. Brant-de-Campos, R. R. de Avillez, P. L. Souza e B. Yavich
    Brazilian Journal of Physics 27, 316, 1997 e apresentação no 8th Brazilian Workshop on Semiconductor Physics, Águas de Lindóia, SP, Brasil, fevereiro de 1997.

  • Optical Investigation of Interdiffusion in Narrow GaAs/AlAs Quantum Wells

    J. S. Michaelis, P. L. Souza e B. Yavich
    Brazilian Journal of Physics 27, 173, 1997 e apresentação no 8th Brazilian Workshop on Semiconductor Physics, Águas de Lindóia, SP, Brasil, fevereiro de 1997.
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