Quantum dot structures


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We investigate the growth of III-V semiconductor self-assembled quantum dots by metalorganic vapor phase epitaxy (MOVPE). The quantum dots are either InAs or InGaAs grown on GaAs, InP and their alloys. These quantum dot structures are used in the fabrication of different optoelectronic devices.

We also investigate site-controlled quantum dot nucleation using atomic force microscopy to introduce indentations or anodic oxidation.

Fig. 1 Indentations introduced with an AFM tip and quantum dots grown on the indentations.

The results obtained can be found in the following references:

  • Growth of linearly ordered arrays of InAs nanocrystals on scratched InP.

    Fonseca-Filho, H. D.; Almeida, C. M.; PRIOLI, R.; PIRES, M. P.; SOUZA, P. L.; Wu, Z. H.; Wei, Q. Y.; PONCE, F. A.
    Journal of Applied Physics. , v.107, p.054313 - , 2010.

  • Atomic force nanolithography of InP for site control growth of InAs nanostructures.

    FONSECA FILHO, H.; PRIOLI, R.; PIRES, M. P.; LOPES, A. J.; SOUZA, P. L.; PONCE, F. A.
    Applied Physics Letters. , v.90, p.013117 - , 2007.

  • Growth of InAs nanostructures on InP using atomic-force nanolithography.

    FONSECA FILHO, H.; PRIOLI, R.; PIRES, M. P.; LOPES, A. J.; SOUZA, P. L.; PONCE, F. A.
    Applied Physics. A, Materials Science & Processing (Print). , v.89, p.945 - 949, 2007.
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