Pseudomorphic InGaAs/InAlAs structures


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InxGa1-xAs/In.52Al.48As structures were studied by Hall effect and Shubnikov-de Haas measurements as a function of the quantum well thickness and alloy composition, InAlAs doping level and InAlAs spacer thickness. The idea was to optimize the structure so as to obtain the highest possible value for the product of the mobility and the free carrier concentration. Such structures are useful for application in high electron mobility transistors. A record value for such a product was obtained for a 180 Å thick quantum well with x = 0.6 and an InAlAs spacer thickness equal to 50 Å.

The table below show the results for all investigated samples.

300 K 77 K
Amostra In Wth dsp mH ns mH x nx mH ns mH x nx
280 0.53 40 5 10900 3.25 3.54 67600 2.65 17.0
281 0.53 40 8 11100 2.93 3.25 71900 2.35 16.90
282 0.60 23 5 12100 3.32 4.02 80600 2.84 22.90
283 0.70 24 10 8100 2.74 2.22 16500 2.50 6.63
284 0.80 20 8 830 2.10 1.74 780 2.07 0.21
286 0.53 30 5 10900 3.69 4.02 62000 2.98 18.48
287 0.60 18 5 11800 4.06 4.79 77700 3.33 25.87


The results obtained can be found in the following references:

  • Pseudomorphic InGaAs/InAlAs modulation doped heterostructures grown by low pressure metalorganic vapor phase epitaxy

    R. G. Pereira, B. Yavich, L. C. D. Gonçalves, P. L. Souza e A. Henriques
    Electronics Letters 34, 2173, 1998.

  • Modulation-doped InGaAs/InAlAs pseudomorphic structures grown by LP-MOVPE

    P. L. Souza, B. Yavich, A. B. Henriques, R. G. Pereira e L. C. D. Gonçalves
    Proceedings da 24th International Conference on the Physics of Semiconductors, Jerusalem, Israel, World Scientific, 1998.
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